The Founding Story

The Planar Legacy

In the autumn of 1957, eight scientists committed an act of rebellion that would reshape the world. They left their employer to pursue a vision of what semiconductor technology could become — and in doing so, they planted the seeds of Silicon Valley.

The Traitorous Eight

William Shockley, co-inventor of the transistor and Nobel laureate, had assembled the finest team of semiconductor scientists in the world at Shockley Semiconductor Laboratory. But his abrasive management style drove them away. In September 1957, eight of his best engineers — whom Shockley bitterly dubbed the "traitorous eight" — left to found Fairchild Semiconductor.

What Shockley saw as betrayal, history would remember as the founding moment of Silicon Valley.

JB

Julius Blank

Mechanical Engineer

Designed manufacturing equipment and processes

VG

Victor Grinich

Electrical Engineer

Developed quality control and testing methods

JH

Jean Hoerni

Physicist

Invented the revolutionary planar process (1959)

EK

Eugene Kleiner

Engineer

Later co-founded Kleiner Perkins venture capital

JL

Jay Last

Physicist

Led the first integrated circuit production

GM

Gordon Moore

Chemist

Formulated Moore's Law; co-founded Intel

RN

Robert Noyce

Physicist

Co-invented the integrated circuit; co-founded Intel

SR

Sheldon Roberts

Metallurgist

Expertise in crystal growth and materials

1959 — The Breakthrough

Jean Hoerni's Planar Process

The early transistors were unreliable. Their exposed junctions degraded rapidly when exposed to air and moisture. Jean Hoerni's solution was elegantly simple: grow a layer of silicon dioxide — glass — over the entire surface of the silicon wafer.

This protective "planar" layer, flat and uniform, shielded the delicate transistor junctions from contamination. More importantly, it enabled a new way of manufacturing: instead of building transistors one by one, you could now process thousands simultaneously on a single wafer.

The planar process didn't just solve the reliability problem — it made mass production of semiconductors possible for the first time. It was the foundation upon which Robert Noyce would build the integrated circuit.

Silicon Substrate
SiO₂ Oxide Layer
Al
Al
Al

The planar process: a protective oxide layer enables reliable, mass-produced transistors

Watch on YouTubePreserved by Computer History Museum
1960 — The Revolution

Robert Noyce's Integrated Circuit

Building on Hoerni's planar process, Robert Noyce realized that instead of making individual transistors and wiring them together, you could build the entire circuit — transistors, resistors, capacitors, and the connections between them — on a single piece of silicon.

The planar oxide layer wasn't just protection anymore; it became the insulator that allowed metal interconnects to cross over transistors without short-circuiting. The monolithic integrated circuit was born.

In 1967, Fairchild produced a seminal educational film explaining this technology — a film now preserved by the Computer History Museum as a testament to the revolution these engineers created.

The "Fairchildren"

Fairchild became a university for semiconductor entrepreneurs. Over the following decades, alumni would leave to found or lead many of the most important technology companies in history.

Intel

Gordon Moore, Robert Noyce (1968)

The world's largest semiconductor company

AMD

Jerry Sanders and others (1969)

Major CPU and GPU manufacturer

National Semiconductor

Fairchild alumni (1967)

Leading analog chip maker

Kleiner Perkins

Eugene Kleiner (1972)

Legendary Silicon Valley VC firm

Signetics

Fairchild spinoff (1961)

Pioneer in IC manufacturing

Intersil

Jean Hoerni (1967)

Power management semiconductors

The influence extends far beyond these names. Over 400 companies can trace their lineage back to Fairchild — a family tree that defines Silicon Valley itself.

The Legacy Continues

The same precision philosophy that made Fairchild successful — flatness, protection, reliability, continuous improvement — now guides our evolution into orbital manufacturing.